vs-10etf0...pbf series, vs-10etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 1 document number: 94090 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 10 a features ? glass passivated pellet chip junction ? 150 c max operating junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec ? -jesd 47 ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-10etf0... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. ? the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-220ac i f(av) 10 a v r 200 v, 400 v, 600 v v f at i f 1.2 v i fsm 130 a t rr 50 ns t j max. 150 c diode variation single die snap factor 0.6 base cathode 2 13 anode cathode to-220ac 1 2 3 major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 10 a i fsm 130 t rr 1 a, 100 a/s 50 ns v f 10 a, t j = 25 c 1.2 v t j -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma VS-10ETF02PBF, vs-10etf02-m3 200 300 3 vs-10etf04pbf, vs-10etf04-m3 400 500 vs-10etf06pbf, vs-10etf06-m3 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 128 c, 180 conduction half sine wave 10 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 110 10 ms sine pulse, no voltage reapplied 130 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 60 a 2 s 10 ms sine pulse, no voltage reapplied 85 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 850 a 2 ? s
vs-10etf0...pbf series, vs-10etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 2 document number: 94090 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.2 v forward slope resistance r t t j = 150 c 23.5 m ? threshold voltage v f(to) 0.85 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 3.0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 a pk ? 25 a/s ? 25 c 200 ns reverse recovery current i rr 2.75 a reverse recovery charge q rr 0.32 c snap factor s0.6 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance ? junction to case r thjc dc operation 1.5 c/w maximum thermal resistance ? junction to ambient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case st yle to-220ac (jedec) 10etf02 10etf04 10etf06
vs-10etf0...pbf series, vs-10etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 3 document number: 94090 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 130 125 150 0 6 maximum allowable case temperature (c) average forward current (a) 4 28 140 60 30 90 180 10 12 10etf.. series r thjc (dc) = 1.5 c/w 145 135 conduction angle 120 120 ? 130 125 120 150 010 maximum allowable case temperature (c) average forward current (a) 6 212 140 16 10etf.. series r thjc (dc) = 1.5 c/w 145 135 ? conduction period 48 14 60 30 180 90 120 dc 4 0 16 0 maximum average forward power loss (w) average forward current (a) 8 10 10 10etf.. series t j = 150 c 12 8 46 180 rms limit conduction angle 2 2 6 14 60 30 90 120 ? 4 0 20 0 maximum average forward power loss (w) average forward current (a) 12 12 16 10etf.. series t j = 150 c 16 8 ? conduction period dc 48 60 30 180 90 120 rms limit peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 110100 20 30 40 50 60 70 80 90 100 110 120 v s -10etf.. s erie s at any rated load condition and with rated vrrm applied following s urge. initial tj = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s) 0.01 0.1 1 10 10 30 50 70 90 110 130 150 maximum non-repetitive s urge current ver s u s pul s e train duration. initial tj = tj max. no voltage reapplied rated vrrm reapplied v s -10etf.. s erie s
vs-10etf0...pbf series, vs-10etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 4 document number: 94090 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 instantaneous forward current (a) instantaneous forward voltage (v) t j = 150 c t j = 25 c 10etf.. series 0 0.1 0.2 0.3 0.4 0 40 80 120 160 200 rate of fall of forwar d current - d i/ d t (a/s) 1 a 5 a 10 a typical reverse recovery time - t rr (s) 8ewf.. s s erie s t = 25 c j i = 20 a fm 8 a 2 a 0.4 0.3 0 0 40 80 120 160 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 150 c 0.1 0.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 1.4 0.6 0 0 40 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 25 c 0.2 0.4 1.0 0.8 1.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 2.5 1.5 0 0 40 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 150 c 0.5 1.0 2.0 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 15 9 0 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 25 c 3 6 12 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a
vs-10etf0...pbf series, vs-10etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 5 document number: 94090 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 20 12 0 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10etf.. series t j = 150 c 4 8 16 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 0.1 1 10 10 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) single p u lse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 10etf.. series steady state v al u e (dc operation) 0.01 0.001
vs-10etf0...pbf series, vs-10etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 6 document number: 94090 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-10ETF02PBF 50 1000 antistatic plastic tube vs-10etf02-m3 50 1000 antistatic plastic tube vs-10etf04pbf 50 1000 antistatic plastic tube vs-10etf04-m3 50 1000 antistatic plastic tube vs-10etf06pbf 50 1000 antistatic plastic tube vs-10etf06-m3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220ac pbf www.vishay.com/doc?95224 to-220ac -m3 www.vishay.com/doc?95068 2 - current rating (10 = 10 a) 3 - circuit configuration: e = single diode 4 - package: t = to-220ac 5 - type of silicon: f = fast soft recovery rectifier 6 - voltage code x 100 = v rrm 7 02 = 200 v 04 = 400 v 06 = 600 v device code 6 2 4 3 5 7 10 e t f 06 pbf vs- 1 1 - vishay semiconductors product pbf = lead (pb)-free and rohs-compliant -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free - environmental digit
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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